Rapid Thermal Processing (RTP) refers to a semiconductor manufacturing process which heats silicon wafers to high temperatures (up to 1200°C or greater) on a timescale of several seconds or less. During cooling, however, wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock. Such rapid heating rates are often attained by high intensity lamps or lasers. These processes are used for a wide variety of applications in semiconductor manufacturing including dopant activation, thermal oxidation, metal reflow and chemical vapor deposition.

Rotalab's RTP furnaces and other laboratory furnaces can be used for various applications for silicon, compound semiconductor, photovoltaic, micro-electromechanical systems (MEMS) and other materials. Typical processes include implantation annealing, contact annealing, rapid thermal oxidation, rapid thermal nitridation, crystallization and densification.

Configurations for CVD of graphene and selenization processes are available.

  • OTF-1200X-50-SL-UL

  • OTF-1200X-4-RTP-UL

  • OTF-1200X-S-DVD

  • GSL-1500X-RTP50

  • OTF-1200X-4-RTP-SL

  • OTF-1200X-80SL

  • OTF-1200X-S2-50SL

  • OTF-1200X-4-C4-SL-UL

  • GSL-1500X-OTF-50SL

  • OTF-1200X-RTP-II

  • OTF-1200X-RTP-II-5